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Graphene Nanoelectronics: Device Physics and Technology Exploration

[责任编辑]李敏妍 [信息提供]微纳科学技术研究院

报告题目:Graphene Nanoelectronics: Device Physics and Technology Exploration

报告人:Prof. Jing Guo, Department of ECE, University of Florida, USA

报告时间:10:00-11:30, Apr.10, 2013

报告地点:薄膜与微细技术教育部重点实验室(微纳科学技术研究院大楼102室)

Abstract:

In recent years, significant progress has been achieved in graphene and monlayer 2D material electronics. In a graphene, low bias transport can be nearly ballistic. Conduction and valence bands of a graphene nanostructure are symmetric, which is advantageous for complementary applications. The excellent transport property promises high-speed THz transistor applications. Graphene and its nanostructures are receiving much attention for possible device applications.

Device models and quantum simulations play an important role on understanding experiments, assessing technology potential, and optimizing designs in nanoelectronics. We have developed an atomistic device simulator for graphene devices based on the non-equilibrium Green's function (NEGF) formalism. The simulator provides an atomistic scale description for quantum transport in the presence of inelastic scattering and electron-photon interaction. We show that edge chemistry of graphene nanoribbons (GNRs) provides promising opportunities to engineer device properties. Device physics and design options of GNR-based tunneling transistors with ultrasteep subthreshold swing and low power dissipation are examined. Radio frequency (RF) characteristics of graphene transistors are simulated for understanding their potential in high-speed transistor applications.

Biography:

Jing Guo is currently an Associate Professor in Department of Electrical and Computer Engineering at University of Florida. He received his Ph.D. degree in electrical engineering from Purdue University, West Lafayette, IN. His research interests focus on nanoscale electronic device and material simulations, quantum transport, and modeling of optoelectronic and spintronic devices. He has published over 100 peer-reviewed journal papers on prestigious journals including Science, Nature, Nano Lett., Nature Nanotechnology, and IEEE Transactions. He is a recipient of the US National Science Foundation (NSF) Faculty Early CAREER Award. He served in the technical program committee of International Electron Device Meeting (IEDM) in 2007-2008 and 2012-2013 and Device Research Conference (DRC). He is the coauthor of the book, "Nanoscale Transistors: Device Physics, Modeling, and Simulation" published by Springer.